Gallium Nitride (GaN) is a semiconductor material with a wide bandgap, allowing for much higher breakdown voltages than silicon. In the last few years GaN power amplifiers have been demonstrated with Watt-level output powers and high efficiencies up to mm-wave frequencies. The efficiency of a power amplifier and the linearity of a power amplifier can be increased e.g. by modulating the bias of the transistors, the power supply of the power amplifier, ... This requires electronics to sense and to control several parameters of the power amplifier. For this type of electronics, CMOS is best suited as this allows for very compact realizations.
Imec is developing a technology that co-integrates GaN devices with CMOS. Compared to the separate use of these technologies, this allows for a higher degree of integration and much more possibilities for interactions between GaN and CMOS, eventually yielding improved system performance.
In this thesis you will design a GaN power amplifier operating around 28 GHz. The average output power is 1 Watt. The interactions with CMOS circuits will be made with simulations only.
Type of project: Internship, Thesis, Combination of internship and thesis
Duration: 9-12 months
Required degree: Master of Science, Master of Engineering Science
Required background: Electrotechnics/Electrical Engineering
Imec allowance will be provided for students studying at a non-Belgian university.