Imec is currently investing heavily into exploratory and emerging materials like topological insulators (TI) which could potentially enable a large variety of new functionalities such as spin-based logic or memory devices and up to quantum computing. There is a strong need to better understand and control of these emerging materials as well as explore new device schemes.
In the PhD-project proposed here, we want to explore 3D topological insulator materials grown by Molecular Beam Epitaxy (MBE) technique. The 3D TI of interest is Bi2Se3 compound (or varieties thereof) which can be grown through Van der Waals epitaxy on various substrates. The key role of this PhD position will be to study the epitaxial growth of TI thin films by means of MBE, physical (including ARPES) and electrical (including Hall bar structures) characterizations of the grown layers together with the interpretation of experimental results. The research will be strongly linked to the modeling project on nanoscale spintronic devices and systems and supported by experts from different domains in imec.
The PhD candidate is expected to:
- focus on the heteroepitaxy aspects and study the physics and chemistry involved in MBE growth of TI materials;
- learn and master characterization techniques such as ARPES (angle resolved photo emission spectroscopy), X-ray diffraction, TEM (transmission electron microscopy), RBS (Rutherford Backscattering spectroscopy), and Raman Spectroscopy in order to collect valuable information from measurements performed on the structures fabricated;
- build further on this knowledge to develop the electrical characterization of these TI materials in close collaboration with device specialists.
Required background: Nanotechnology, Electronics, Materials science, Epitaxy
Type of work: 50% experimental work, 40% characterizations, 10% literature study
Supervisor: Stefan De Gendt, ,
Daily advisor: Clement Merckling
The reference code for this position is 2020-061. Mention this reference code on your application form.