Ferroelectric devices for memory applications

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Characterize the ferroelectric properties of capacitors and FET for the best memory performances.

Ferroelectric hafnium oxide (HfO2) attracted a lot of interests since its discovery in 2007. Its scalability and CMOS compatibility are two advantages over conventional ferroelectric materials, favoring new device integration. Such material could enable the fabrication of low power devices in standalone semiconductor manufacturing facilities due to its scalability and CMOS compatibility.

As an intern in memory device team at imec, you will support state-of-the-art ferroelectric technology development by characterizing and understanding of semiconductor devices. During your internship, you will have the opportunity to work with device characterization, reliability and integration engineers.

The candidate should have excellent communication skills, both oral and written; ability to independently adapt and learn, a background in solid state physics and electronics; knowledge in software scripting for data elaboration (MATLAB, ...). Previous device characterization experience constitutes a plus.

Type of work: 70% ferroelectric electrical characterization, 30% understanding.

Position available starting from August/September

Type of project: Internship, Thesis

Duration: 6 months

Required degree: Master of Engineering Technology

Required background: Electrotechnics/Electrical Engineering, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact: Nicolo Ronchi (Nicolo.Ronchi@imec.be)

Imec allowance will be provided for students studying at a non-Belgian university.

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