250th ECS Meeting

Imec will be participating in the Electrochemical Society meeting. The 250th ECS Meeting is a historic celebration of science, innovation, and community. For 250 meetings, ECS has united researchers, engineers, and leaders from around the world to exchange ideas that transform technology and improve lives. This milestone gathering honors the Society’s legacy of discovery while igniting new collaborations that will define the next era of electrochemical and solid state science. Featuring world-class presentations, panels, poster sessions, and exhibits, the 250th ECS Meeting celebrates the power of the ECS community to connect, inspire, and create the next century of clean-energy, sustainable-technology, and materials breakthroughs. Join us to learn more on our latest breakthroughs and how to work with imec: 

PRESENTATIONS:

• 'Defect Analy:sis In Si1-x-YGexCy Hetero-Epitaxial Layers on n-Type Silicon'
  October 28 | 08:50
  Roger Loo, Principal Member of Technical Staff at imec & Visiting Professor,Ghent University
• 'Low Temperature Epitaxial SiGe/Ge Multistacks on Strain Relaxed Buffers for Heterogeneous CFET Device Fabrication'
  October 28 | 11:20
  Roger Loo, Principal Member of Technical Staff at imec & Visiting Professor,Ghent University
• 'From Spatial Distribution to Activation: APT-XANES Mapping of Phosphorus in Silicon'
  October 29 | 8:50
  Richard J.H.Morris, Researcher, imec
• '{Si / SiGe} epitaxial multi-layers grown using Si2H6 and GeH4 in view of 3D DRAM applications'
  October 29 | 10:10
  Roger Loo, Principal Member of Technical Staff at imec & Visiting Professor,Ghent University

POSTERS:

• 'Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications' / Epitaxial Growth of Si/SiGe and Ge/SiGe Stacks Using Isotopically Purified 28SiH4 and 73Ge-Depleted GeH4 for Spin Qubit Devices
  October 28 | 18:00
  Roger Loo, Principal Member of Technical Staff at imec & Visiting Professor,Ghent University