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/250th ECS Meeting

250th ECS Meeting

October 25 - 29, 2026 | Calgary, Canada

The 12th International SiGe, Ge, & Related Compounds: Materials, Processing and Devices Symposium will be Symposium G04 of the 250th ECS Meeting. This meeting will provide a forum for reviewing and discussing materials and device related aspects of SiGe, Ge, and Related Compounds.

Imec

  • '{Si / SiGe} epitaxial multi-layers grown using Si2H6 and GeH4 in view of 3D DRAM applications & Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications & Epitaxial Growth of Si/SiGe and Ge/SiGe Stacks Using Isotopically Purified 28SiH4 and 73Ge-Depleted GeH4 for Spin Qubit Devices', by Roger Loo, Principal Member of Technical Staff + Visiting Professor at Ghent University, imec.

Event details

The 250th ECS Meeting is a historic celebration of science, innovation, and community. For 250 meetings, ECS has united researchers, engineers, and leaders from around the world to exchange ideas that transform technology and improve lives. This milestone gathering honors the Society’s legacy of discovery while igniting new collaborations that will define the next era of electrochemical and solid state science. Featuring world-class presentations, panels, poster sessions, and exhibits, the 250th ECS Meeting celebrates the power of the ECS community to connect, inspire, and create the next century of clean-energy, sustainable-technology, and materials breakthroughs.

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