45th Annual EOS/ESD Symposium & Exhibits
30 September - 05 October 2023 | Riverside, USA
imec
Paper presentation
Monday 02/10/2023, at 12:05 p.m.
Abhinay Sandupatla on Solutions To Improve HBM ESD Robustness of GaN RF HEMTs
Gallium Nitride (GaN) high electron mobility transistors (HEMT) exhibit 3 different types of HBM failures, namely, reverse Schottky electric field (REF) failure, 2DEG channel constant power (CP) failure and forward Schottky current crowding (CC) failure. HBM robustness of each failure can be improved by ~75% to ~200% by increasing the gate-ohmic spacing or by increasing device width. Increasing field plate length increases HBM robustness against REF by ~50%. Similarly using a back barrier helps increase HBM robustness against CP failure by ~60%.
About
The EOS/ESD Symposium is dedicated to the understanding of issues related to electrostatic discharge and electrical transients/overstress, and the application of this knowledge to the solution of problems in consumer, industrial, and automotive applications, including electronic components, as well as in systems, subsystems, and equipment.