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ICSI/ISTDM 2025
November 10 - 13, 2025 | Kanagawa, Japan
International Conference on Si Epitaxy and Heterostructures / International Si Technology and Device Meeting
Imec
- Stefan Kubicek, Principal Member of Technical Staff, will deliver a presentation on Production compatible fabrication of quantum computing devices.
- Thomas Dursap, researcher, will deliver a talk entitled: Low temperature SiGe:B source/drain epitaxy for CFET applications
- Yosuke Shimura, senior researcher, will deliver a talk entitled: Epitaxial Growth of Strain Relaxed SiGe Layers with GeCl4
- Roger Loo, Principal Member of Technical Staff, will deliver a talk entitled: Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications
In addition, imec is co-author of the following presentations:
- Daniel Casey (ASM International): Selective Ultra-Low Temperature SiGe:B Source/Drain Epitaxy for Application in Nanosheet-based Devices
- Ambrishkumar J. Devaiya (Peter Gruenberg Institute-9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Julich): Ge Epitaxy on Si (001) using Halide-based Chemical Vapor Deposition
Event details
The ICSI / ISTDM (International Conference on Si Epitaxy and Heterostructures / International Si Technology and Device Meeting) offers a joint platform to discuss state-of-the-art research and development activities in the area of Group IV materials, technology research, and device applications. The conference is organized in un-even years. The venue rotates between Asia, Europe, and America.