/IEEE International Electron Devices Meeting

IEEE International Electron Devices Meeting

09 - 13 December 2023 | San Francisco, USA

Imec will be present at the 2023 IEEE International Electron Devices Meeting (IEDM) as (co-)author of 16 papers, including three invited papers, two features in the focus session and one IEDM committee highlighted paper. Imec’s contributions show progress in advanced logic technologies, memory technologies, interconnect and 3D integration, technologies for 5G-advanced wireless communication, advanced photonics for image sensors, and bioelectronics. Imec will also host a tutorial on ‘Reliability Challenges of Emerging FET Devices’, to be presented by Jacopo Franco, principle member of technical staff at imec.


We demonstrate high performance AlN/GaN MISHEMTs on 200 mm Si substrate grown using MOCVD. We systematically studied the trade-off between RF small- and large-signal performance on scaling AlN and in-situ SiN gate dielectric thicknesses. A record large-signal performance at 28 GHz is achieved.

We elucidate a mechanism behind time-dependent on-state breakdown of GaN HEMTs, where the time-to-failure varies from sub-μs to hundreds of seconds. We reveal that the breakdown is sequentially caused by charge movement in the back barrier (BB), drain-corner electric field densification, impact ionization, and avalanche breakdown.

We demonstrate the functionality of an extreme perpendicular spin-orbit torque (SOT)-MRAM where the SOT layer and magnetic tunnel junction (MTJ) pillar exhibits comparable dimensions. This novel design leads to a significant reduction in the power consumption (63% decrease), an enhancement in endurance (>1015 cycles), and a reduction in bit-cell area.

We report on the pulse-based non-destructive read of a record high capacitive memory window in a BEOL compatible HZO-based ferroelectric capacitor. Contrary to conventional reading schemes, we show that the non-destructive read operation enables a full decoupling between the read- and write-endurance and we demonstrate a read-endurance beyond 1e11 cycles.

In this paper, we review the current state of W2W bonding technology and discuss recent breakthroughs that have enabled significant scaling. The results show successful control of Cu/SiCN surface topography, precise alignment accuracy, and favorable electrical performance. We analyze the relationship between bonding overlay and contact resistance, yield performance, and reliability.

In DTCO/STCO era, sub-µm Si substrate is essential for vertical connections. This work first- time evaluates the ESD performance of various ESD devices with 300nm wafer thickness and nTSV. The thermal dissipation of these ESD devices with BS contact/ metals were studied for a possible solution to the thermal issue.

We demonstrate a new technology for splitting colors with sub-micron resolution using standard backend processing. The color splitting is tunable via the geometry and can be designed to correspond to the color sensitivity of the human eye. The technology results in: higher signal-to-noise ratio, better color quality and enhanced resolution.

Overview imec contributions at 2023 IEDM

Saturday, Dec 9, 2023

Monday, Dec 11, 2023

Tuesday, Dec 12, 2023

Wednesday, Dec 13, 2023

Event Details

IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

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