IEEE International Memory Workshop

Imec

Imec is present at the 15th IEEE International Memory Workshop with 5 papers, including 1 invited paper on spin-orbit torque MRAM, by Sebastien Couet, program director at imec. Other papers cover improvements in 3D NAND, ferroelectric memories, neuromorphic & analog in-memory computing. Antonio Arreghini, principal member of technical staff at imec, holds the technical chair at IEEE IMW 2023 and is chairing 1 tutorial and 1 session. Subhali Subhechha, senior researcher for active memory at imec, will participate in the panel discussion on 3D structuring as technology driver for memory.

Imec highlights

“Enabling 3D NAND Trench Cells for Scaled Flash Memories” S. Rachidi

Abstract

3D Trench cells with a vertical flat channel have been proposed to increase the cell density over 3D NAND gate-all-around (GAA). In this work, we investigate the device characteristics of Trench cells. In absence of curvature, Trench cells exhibit inferior program and erase in comparison to a GAA reference. However, the memory window of Trench cells is significantly improved with channel width scaling, gate stack engineering and metal gate integration. This study also provides a basis for design and fabrication of future ultra-dense 3D NAND memories based on the Trench architecture.  

“Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications”, S. Couet (invited)

Abstract

Spin-orbit torque (SOT) magnetic random-access memory (MRAM) is a 3-terminal non-volatile memory technology promising high speed up to multi-GHz, high endurance, and non-volatility. Here we show how SOT-MRAM stack can be optimized to reach performance towards an embedded last level cache memory replacing SRAM. Moreover, we show how the stack and device geometry can be optimized to increase density and how the stack properties can be optimized to perform analog in-memory computing (AiMC) functions using high resistance devices.

Overview imec contributions

Sunday May 21, 2023

Tutorial 1 – TCAD and modeling

Chaired by Antonio Arreghini, principal member of technical staff at imec

Monday May 22, 2023

Session 2 – 3D NAND I

Chaired by Antonio Arreghini, principal member of technical staff at imec

Tuesday May 23, 2023

Session 4 – Ferro

“Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering”, Z. Chen

“Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND”, L. Breuil

Session 5 – 3D NAND II

“Enabling 3D NAND Trench Cells for Scaled Flash Memories” S. Rachidi

Panel discussion

“Can 3D structuring be a technology driver for memory like it was for NAND?”

Moderator: Tomoya Sanuki, KIOXIA
Panelists:

• Jeongdong Choe, TechInsights
• Alessandro Grossi, Infineon
• Jin-Woo Han, Samsung
• Sony Varghese, Applied Materials
• Subhali Subhechha, imec

Wednesday May 24, 2023

Session 7 - Neuromorphic/In-Mem

“Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications”, S. Couet (invited paper)

“Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays”, S. Subhechha

Check out the full 2023 IEEE IMW program

Event details

The 15th IEEE International Memory Workshop (IEEE IMW) will be held in 2023 in Monterey. It is currently planned as an on-site event. This conference brings the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies. It is sponsored by the IEEE Electron Devices Society and meets annually in May.

Although it is the 15th IMW meeting to be held this year, it has a long history of Non-Volatile Semiconductor Memory Workshops (NVSMW) dating back to 1976. In 2008, NVSMW and the International Conference on Memory Technology and Design (ICMTD) merged to incorporate both the volatile and non-volatile memory aspects in one forum while maintaining the workshop experience. And the scope was extended from non-volatile memory technology and design, which had been successfully discussed in more than 30 years of NVSMW, to the other memory technologies, which were the focus of ICMTD.

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