/ISES Europe

ISES Europe

25 - 26 June 2024 | Porto, Portugal

International Semiconductor Executive Summit EU Power provides a unique platform for networking and expanding your knowledge base. 

Imec

Talk by Bertrand Parvais, principle member of technical staff

GaN-on-Si technology for efficient RF front-ends.

Achieving very high-power efficiency at mmWave frequencies is critical for the deployment of 5G and 6G radio systems. Although compound semiconductors technologies promise to reduce the power consumption of high-power amplifiers, their low-cost fabrication on a CMOS compatible platform remains challenging. 

We introduce in this presentation a GaN-on-Si platform achieving 68% PAE at 28GHz. The  reliability challenges will be highlighted, toghether with the transistor optimization using different materials for the front- and back-barriers.

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International Semiconductor Executive Summit EU Power provides a unique platform for networking and expanding your knowledge base.  Our proven, global success in supporting the growth of the semiconductor industry is promoting collaboration among our trusted network, uniting semiconductor companies facing common challenges.

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