SPIE future sensing technologies

Shortwave infrared image sensors based on thin-film InAs quantum dot photodiodes - 13 November 2025 • 15:40 - 16:00 Japan Standard Time | Pacifico Annex Hall Room F203 - Wenya Song, principle member of technical staff - We present high-performance short-wavelength infrared (SWIR) image sensors based on RoHS-compliant InAs colloidal quantum dots (CQDs), offering a cost-effective alternative to InGaAs. Our InAs QDPDs achieve EQE >30% at 1200 nm and <10 µA/cm² leakage current, with extended performance to 1400 nm. Integrated on silicon ROICs with 3T pixel architecture and dual conversion gain, the sensors deliver 83.5 dB dynamic range and reduced noise via correlated double sampling. Demonstrated imaging includes scenes through smoke and silicon. Additionally, we introduce metasurface-tuned optical cavities for future multispectral SWIR sensing.