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SPIE Photomask technology & EUV Lithography 2025
September 21 - 25, 2025 | Monterey, California, USA
The premier technical meeting for mask makers, EUVL, and emerging technologies
Imec
- Dry resist process optimization at the 0.33NA resolution limit and validation via large area e-test inspection - Stephane Lariviere
- Advancements in dry resist patterning towards high NA EUV enablement - Matteo Beggiato
- Enabling Curvilinear Masks: Novel Mask Qualification Methodology and Experimental Verification - Darko Trivkovic
- Advances of dry resist towards next-generation lines-spaces patterning in high NA EUV lithography - Matteo Beggiato
- Stitching at high NA EUV: a first experimental study - Vincent Wiaux
- Impact of MOR Anomalies on Lithography and OPC: Challenges and Solutions - Kareem Pervaiz
- Defectivity-Aware EUV Process Window Characterization for Monolithic Complimentary FET HAR and 3D Patterning - Yang, Hong-Cheon
- Lithography strategies on overlay control of back-side patterning - Saroj, Rajendra Kumar
- Unraveling the role of environment on the lithographic performance of metal oxide resists: key role of oxygen during post-exposure bake - Ivan Pollentier
- Understanding the impact of the EUV photon absorption distribution in a patterned EUV resist and its lithographic performance - Danilo De Simone
- TEM/EDX analysis in support of EUV mask model improvement - Rik Jonckheere
Event details
Make plans to join the premier worldwide technical meeting for photomasks, patterning, metrology, materials, inspection/repair, mask business, extreme UV lithography, and emerging technologies.