StorAIge

​Fully depleted silicon on insulator (FD-SOI) is an innovative technology that leverages the established planar process, while delivering successive generations of smaller chips. It helps keep the Moore’s law going without involving complex manufacturing processes. The EU-funded StorAIge project aims to develop and industrialise the 28 nm FD-SOI transistor and embedded phase-change memory to develop high-performance, ultralow-power system-on-chip solutions for edge computing applications. The project targets chipset and solutions with very efficient memories and high computing power targeting 10 TOPS/W. StorAIge will help define how artificial intelligence could drive next-generation edge devices, with special focus on automotive, industrial and security applications.