GaN Power Device Talent Community 

What you will do

Gallium Nitride (GaN) power technology offers significant advantages over traditional silicon-based power devices. GaN technology provides higher efficiency, faster switching speeds, and the ability to operate at higher temperatures and voltages. This results in smaller, lighter, and more energy-efficient power systems. GaN devices are used in a variety of applications, including power supplies, electric vehicles, and renewable energy systems. They are particularly beneficial in high-voltage and high-power applications due to their low on-resistance and reduced system parasitic inductance.  

GaN HEMT devices are transforming power electronics, enabling more efficient and advanced systems.  
Imec has established enhancement-mode GaN technologies ranging from 40 V to 650 V, demonstrating excellent performance and reliability. At the same time, Imec is enabling GaN fabrication on 300 mm wafers, expanding its voltage range to both low- and high-voltage domains, exploring advanced substrates, and developing new solutions for next-generation GaN power devices. Its research spans GaN epitaxy, processing technology, device engineering, reliability, design, layout, and PDK development. 

In this endeavor, we are seeking an enthusiastic GaN power technology specialist. Depending on your profile, you will contribute to one or more of the following areas: 

Device design and reliability 
In this role, you will use your understanding of GaN HEMT operation, device physics, and reliability mechanisms to support technology development, interpret experimental results, and guide design, process, and characterization choices for improved performance and robustness. 
Your tasks include: 

• Analyze experimental data and translate device behavior into physics-based insights and improvement directions 
• Contribute to device design choices, layout options, design-of-experiment definitions, and process split proposals 
• Support reliability data interpretation, identify possible degradation or failure mechanisms, and propose follow-up characterization or failure analysis 
• Collaborate with epitaxy, process integration, characterization, modeling, and layout engineers to connect device performance to technology choices 
• Present device physics and reliability learnings in technical reviews, project meetings, and roadmap discussions 

Key requirements: 

• A solid background in semiconductor device physics 
• Ability to manipulate and analyze experimental data and link it to the technology 

Advanced electrical characterization 
In this role, you will define and execute characterization and generate high-quality data to understand device behavior, assess performance and reliability, and support further technology, process, and design optimization. 
Your tasks include: 

• Plan and execute electrical characterization of GaN power devices at wafer and package level, including static, dynamic, and reliability-oriented measurements 
• Develop, optimize, and standardize test methodologies and measurement setups for DC, pulsed I-V, capacitance, switching, and high-voltage characterization 
• Analyze characterization data to gain insights on the device behavior, benchmark performance, identify failure mechanisms, and provide feedback for technology, process, and layout optimization 
• Collaborate closely with process integration, epi, device, and layout engineers to translate measurement results into actionable improvements 
• Document results in clear technical reports, contribute to roadmap discussions, and take ownership of characterization-related projects  

Key requirements: 

• Ability to use standard and advanced lab characterization tools 
• Ability to manipulate and analyze experimental data and link it to the technology 
  

TCAD simulations  
In this role, you will use TCAD simulations to support GaN power device development, improve physics understanding, and connect device architecture, process choices, and experimental results through predictive simulation and data analysis. 
Your tasks include: 

• Develop, update, and calibrate TCAD simulation decks for GaN HEMTs and related power device structures 
• Analyze TCAD outputs and compare simulation results with electrical characterization data to improve device understanding 
• Use simulations to assess device concepts, process splits, epi-stack choices, layout options, and design trade-offs 
• Collaborate with device design, epitaxy, process integration, characterization, reliability, and layout teams to translate simulation insights into technology improvements 
• Document simulation assumptions, calibration approaches, limitations, and key learnings for internal reviews and customer discussions 

Key requirements: 

• A solid background in semiconductor device physics and deep understanding of GaN specific aspects 
• Familiarity with a TCAD tool for semiconductor simulations 

Compact modeling 
In this role, you will develop, calibrate, and maintain compact models for GaN power devices, enabling accurate PDK implementation, circuit simulation, model verification, and technology support. You will connect characterization data, device physics, and platform requirements to deliver robust models for internal teams, customers, and partners. 
Your tasks include: 

• Develop, update, and calibrate compact models for GaN power devices to support PDK implementation and circuit simulation 
• Follow, evaluate, and implement the latest model versions, ensuring consistency with platform needs and PDK releases 
• Define and perform characterization needed for model extraction, implementation, calibration, and verification 
• Use compact models to support device-physics understanding, technology benchmarking, and design trade-off analysis 
• Propose new test structures and mask-set content to improve modeling accuracy and support future model development 
• Support customers and partners with model usage, updates, and technical discussions 

Key requirements: 

• Experience with industry-standard device modelling software, such as Keysight IC-CAP  
• Experience with Process Design Kits (PDKs) and SPICE/Cadence simulation for device model verification   
  

Layout 
In this role, you will create and optimize GaN power device layouts, test structures, and mask-set content, ensuring that layout choices capture device, process, characterization, modeling, and PDK needs. 
Your tasks include: 

• Design and implement GaN power device layouts, test structures, p-cells, floorplans, and complete mask-set layouts 
• Translate requirements from device design, process integration, characterization, modeling, and PDK teams into robust layout solutions 
• Review layouts before mask ordering, support design-rule checks, and coordinate with mask-preparation teams 
• Use characterization and process feedback to improve layout robustness, performance, reliability, and manufacturability 
• Contribute to efficient layout workflows, automated test-chip generation, and technical documentation 

Key requirements: 

• Familiarity with Cadence Virtuoso Layout Suite 
• Strong coding skills, with a proactive mindset and passion for automation 
  

PDK development 
In this role, you will develop, maintain, and improve PDK content for GaN power technologies, enabling reliable design, verification, parasitic extraction, and customer use of imec’s technology platforms. 
Your tasks include: 

• Maintain PDK versions and implement updates, bug fixes, design rules, verification decks, and extraction support 
• Align PDK content with process flows, layout requirements, compact models, characterization results, and platform roadmaps 
• Support DRC, LVS, and parasitic extraction setup to enable reliable device and circuit design 
• Communicate with internal teams, customers, and partners to collect requirements and resolve PDK-related questions 
• Document releases, usage guidelines, known limitations, and update plans to ensure traceability and ease of adoption 

Key requirements: 

• Understanding of semiconductor device and IC design flow and familiarity with PDK and design enablement. 
• Prior experience developing and validating PDK components with strong coding and automation skills and a proactive mindset.  

Across all roles, you will:  

• Collaborate closely with device, epitaxy, process integration, and device teams 
• Contribute to GaN power technologies from early concepts and experiments to robust and manufacturable solutions 
• Generate high-quality technical results, support publications and patents, and represent imec at relevant power electronics and semiconductor conferences 
• Interact closely with industrial partners and customers to understand their requirements, support technical discussions, and help translate application needs into technology development priorities 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will define the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

• You have a master or higher degree in Electrical/Electronic Engineering or similar  
• You have a solid background in semiconductor device physics 
• You have strong knowledge in GaN HEMT device physics and operations 
• Your knowledge of GaN processing and fabrication technologies is highly valued 

IMEC and its affiliates will not accept unsolicited resumes from any source other than directly from a candidate. IMEC will consider unsolicited referrals and/or resumes submitted by vendors such as search firms, staffing agencies, professional recruiters, fee-based referral services and recruiting agencies (hereafter “Agency”) to have been referred by the Agency free of charge. IMEC will not pay a fee to any Agency that does not have a prior written agreement with IMEC, validated by its HR department, in place regarding a specific job opening and allowing to submit resumes.