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/Laser-Based, Photon, and Thermal Emission Microscopy Analysis of GaN Power Devices

Laser-Based, Photon, and Thermal Emission Microscopy Analysis of GaN Power Devices

Master projects/internships - Leuven | Just now

Semiconductor failure analysis: from evidence to root cause
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The electrification of the automotive and energy sectors is driving rapid innovation in power devices, with wide-bandgap semiconductors, such as gallium nitride, leading the way. Thanks to these materials, electrical switches and converters can operate at higher switching frequencies and temperatures, greatly enhancing efficiency.  However, despite their remarkable performance benefits, WBG power devices also pose several fabrication and reliability challenges. This project will explore the application of laser-based, photon, and thermal emission microscopy analysis techniques for failure analysis.


Type of project: Combination of internship and thesis

Required degree: Master of Science

Supervising scientist(s): For further information or for application, please contact: Kristof J.P. Jacobs (Kristof.J.P.Jacobs@imec.be) and Izabela Kuzma Filipek (Izabela.KuzmaFilipek@imec.be)

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