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/Solid-State Gain Integration for Cold Atom and Trapped Ion Modulators

Solid-State Gain Integration for Cold Atom and Trapped Ion Modulators

PhD - Leuven | Just now

Develop the next generation of amplified modulators for atomic and ionic qubits.
Apply

Scalable trapped-ion and cold-atom quantum computers require multiple modulated laser beams with extremely demanding specifications in linewidth, stability, switching speed and on/off ratios.

This PhD will develop ultra-high extinction ratio (> 60 dB) and low power modulators combined with rare-earth-doped AlOx gain materials to drive qubit gates in atomic and ionic quantum processors. The goal is to explore fundamental limitations of the integrated modulators in terms of long-term stability, power handling, as well as laser intensity and phase noise, which all impact gate fidelities in scalable quantum systems.

The work combines material development and modulator and amplifier design to establish an integrated modulator platform for future quantum computing, optical clocks, and quantum sensing systems.


 


 

Required background: Photonics Engineering, Engineering Physics, Electronics Engineering, Physics

Type of work: 20% simulation, 40% fabrication, 40% experiment

Supervisor: Kasper Van Gasse (UGent)

Co-supervisor: Kasper Van Gasse (UGent)

Daily advisor: Frederic Peyskens

The reference code for this position is 2027-026. Mention this reference code in your application.

Apply
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