This 170 MS/s 11 ENOB 1.36 mW pipelined SAR ADC with complementary residue amplifier in 40 nm CMOS is a good candidate for the latest wireless standards.
|Macro Name||ADC (Analog Digital Converter) 11 ENOB 170MS/s|
|Short Description(max 128 characters)||This 170 MS/s 11 ENOB 1.36 mW pipelined SAR ADC with complementary residue amplifier in 40 nm CMOS is a good candidate for the latest wireless standards.|
|Extra description (optional)||Imec offers a white-box IP license with support on a 170 MS/s 11 ENOB 1.36 mW pipelined SAR (Successive Approximation Register) ADC with complementary residue amplifier in 40 nm digital CMOS. Each ADC channel of the 2x interleaved ADC consists of a 6 bit coarse SAR, a dynamic residue amplifier, a 8 bit fine SAR. The complementary dynamic single-stage residue amplifier reuses charge that is typically wasted during the reset phase, and hence improves efficiency by a factor 2 in this block. This ADC achieves a SNDR of 67 dB from 20 to 1710 MS/s at 10 MHz input frequency. The energy is about 4.2 fJ per conversion step at 10 MHz up till 170 MHz clock frequency, and 9 fJ per copnversion step at Nyquist frequency at 170 MHz clock frequency.
This low power ADC is a good data converter candidate for the latest wireless standards.
|Market category||Communications - Data processing - Consumer Electronics|
|Possible applications & standards||This ADC is a good candidate for next generation Software Defined Radio ( SDR ) receivers, including LTE Advanced and the emerging generation of WIFI IEEE 802.11ac.|
|Primary Category||Analog & Mixed Signal IP:A2D Converter|
|Node / process||40nm Low Power CMOS|
|Maturity||Silicon proven on prototypes, hence only white-box license (no corner characterization performed for high volume production)|
|Leaflet or datasheet URL|
|Conference where this IP has been published||ESSCIRC 2014|
|Paper publication URL||Download the paper publication here|
|Chip area(for Hard IP only) (um**2)||68400|
|Width (for Hard IP only) (um)||380 um|
|Height (for Hard IP only) (um)||180 um|
|Power (uW/MHz)||8 uW/MHz|
|Constant Power (mW)||1.360 mW @ 170 MS/s|
|Constant Leakage Power (uW)||< 10 uW (at 1.1V)|