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Scaling up GaN- and InP-based technologies for 5G and 6G wireless communication

GaN HEMTs and InP HBTs: integration on a Si platform and co-integration with CMOS components


With the advent of next generation 5G and 6G, telecom operators are pushing up the frequencies of the wireless signals.

While GaN high-electron mobility transistors (HEMTs) show promises for 28/39GHz operation, InP heterojunction bipolar transistors (HBTs) are expected to excel at 100GHz and beyond.

In this article, progress is reported in upscaling GaN HEMTs and InP HBTs to a silicon platform and in co-integrating them with CMOS components – requirements for next-gen high-capacity wireless communication.