/Comparison of wafer back grinding induced damage

Comparison of wafer back grinding induced damage

Internship/thesis - Leuven | More than two weeks ago

Investigation of back grinding induced damage on Si wafer and bulk Ge wafer  

Wafer thinning is necessary during the formation of through silicon via’s for 3D-integration. Subsurface damage is a well-known side effect of back grinding.

Ge substrate thinning could have many benefits related to solar cell performance. (lower weight, lower electrical resistance, lower thermal resistance, ...) 

The resulting subsurface damage created by back grinding a Ge substrate is not well understood.
In this internship we are looking for a master student that will collaborate with the WBA team in developing the Ge-thinning process and take the lead in characterizing the subsurface damage caused by the process. The characterization will consist of substrate thickness, uniformity and bow measurements followed by a comparison of the sub surface damage caused by the back grinding process in Si and Ge substrates using AFM, Top SEM and X-TEM..

Bachelor's program/required background:  Engineering 

Language requirements: English 

Type of Project: Combination of internship and thesis; Internship 

Mentor: Jakob Visker 

For more information or application, please contact Lan Peng (lan.peng@imec.be)

Who we are
Accept marketing-cookies to view this content.
Cookie settings
imec's cleanroom
Accept marketing-cookies to view this content.
Cookie settings

Send this job to your email