/Design and Optimization of the Fastest and Most Efficient RF CMOS Device through TCAD-Based Study

Design and Optimization of the Fastest and Most Efficient RF CMOS Device through TCAD-Based Study

Leuven | More than two weeks ago

Revolutionizing Wireless Connectivity: Unleashing the Power of CMOS in RF Design
The continuous evolution of wireless communication technologies demands higher performance, increased efficiency, and cost-effective solutions. While CMOS technology, particularly FinFET and nanosheet variants, has proven its prowess in digital applications, its adaptation for Radio Frequency (RF) purposes faces challenges in achieving optimal output power and efficiency. Existing RF-tailored CMOS technologies are still bound by constraints set by their digital counterparts. In the era of heterogeneous integration and chiplets, there is a compelling need for tailored RF CMOS devices to meet the specific demands of wireless communication systems. This research proposes an innovative approach to address this challenge by initiating a comprehensive study to design the fastest and most efficient RF CMOS device, utilizing TCAD (Technology Computer-Aided Design) methodologies.
The primary research objectives of this master thesis are as follows:

1) Conduct a thorough literature review

An exhaustive literature review will be conducted to understand the existing challenges and achievements in RF CMOS technology. This review will encompass the current state-of-the-art CMOS technologies, their limitations, and the ongoing efforts to enhance their RF performance. The exploration of competing technologies, such as compound semiconductors, will provide valuable insights into potential benchmarks for the proposed RF CMOS device.

2) TCAD-based device design

The core focus of this research is the TCAD-based study to design the fastest and most efficient RF CMOS device. By revisiting the fundamental principles and leveraging TCAD tools, the aim is to break away from conventional boundaries and optimize the device parameters for superior RF performance. This includes a meticulous exploration of transistor architectures, material choices, and process optimizations.

3) Benchmarking against competing technologies

To validate the effectiveness of the proposed RF CMOS design, benchmarking studies will be carried out against competing technologies, with a specific emphasis on compound semiconductors. Comparative analyses will provide a comprehensive understanding of the performance metrics, thereby establishing the superiority and competitiveness of the newly designed RF CMOS device.

Significance of the Study

This research contributes to the field of RF CMOS technology by providing a fresh perspective on device design, breaking away from traditional constraints. The proposed study aims to push the boundaries of CMOS technology, making it an ideal choice for RF applications. By achieving unprecedented levels of output power and efficiency, the designed RF CMOS device could potentially outperform existing technologies, including compound semiconductors, while remaining cost-friendly and highly integratable.

Type of project: Thesis

Duration: 1 year

Required degree: Master of Engineering Science, Master of Engineering Technology

Required background: Electrotechnics/Electrical Engineering, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact: Nadine Collaert (Nadine.Collaert@imec.be)

Only for self-supporting students.

Who we are
Accept marketing-cookies to view this content.
Cookie settings
imec's cleanroom
Accept marketing-cookies to view this content.
Cookie settings

Send this job to your email