PhD - Leuven | More than two weeks ago
Gallium nitride high electron mobility transistors (GaN HEMTs) offer a compelling combination of high-frequency operation, power handling capability, and efficiency making them a preferred choice for a wide range of RF applications where performance, size, and power efficiency are critical factors. One key application is power amplifiers for 5G and 6G wireless communications.
HEMT requirements strongly differ for various wireless frequency bands. For instance, the design can be orientated towards sub-6 GHz operation at higher power or it can be for ³28 GHz operation at lower power per device. Furthermore, integration of GaN HEMTs on silicon (Si) substrates is desired to enable cost-effective and sustainable solutions for 5G and beyond wireless applications. Therefore, imec is researching on developing GaN HEMTs on Si platform which can rival their GaN-on-SiC counterparts in terms of performance and reliability.
The goal of this PhD is to develop high gain, linear, and reliable GaN HEMTs on Si substrate for 5G and 6G power amplifiers. During this PhD, you will research on:
Required background: A master’s degree in electrical engineering, material science, nanoscience, and nanotechnology or equivalent, with a focus on semiconductor physics and technology. Willingness to work in a cross-functional team and collaborate with other researchers.
Type of work: Device characterization and data analysis: 60%, Device design and physical modeling: 40%
Supervisor: Bertrand Parvais
Daily advisor: Sachin Yadav
The reference code for this position is 2024-004. Mention this reference code on your application form.