Development of Directed Self-Assembly Processes for Sub-30 nm Hexagonal Contact Hole Patterning

As semiconductor devices continue to scale, conventional lithography faces increasing challenges in achieving the required feature dimensions and pattern fidelity. Directed self-assembly (DSA) of block copolymers offers a promising route to extend patterning capabilities beyond the limits of traditional processes. In this project, the student will develop and optimize a process flow for the fabrication of sub-30 nm hexagonal contact hole arrays using DSA. The work will include process development, material evaluation, pattern characterization, and optimization of key metrics such as critical dimension uniformity, defectivity, and pattern placement accuracy. The project combines nanotechnology, materials science, and semiconductor process engineering.