Heterogeneous integration of ultra-low power phase shifters and semiconductor optical amplifiers on silicon photonics

Silicon photonics allows for the integration of different optical components on a single chip and is more and more being introduced in real-world products. However, the silicon photonics platform does not offer a complete set of building blocks. E.g. it lacks ultra-low power consumption phase shifter, as well as semiconductor optical amplifiers. The integration of such components requires heterogeneous integration technologies, because these components are typically based on non-CMOS compatible materials, or require a complete overhaul of the mature silicon photonics process flow. 

At imec-Ghent we are developing a disruptive heterogeneous integration approach: micro-transfer printing. This technique allows the fabrication of non-native components on a separate wafer (in a separate fab), which are then pick-up and printed on the silicon photonics target wafer after it is fully processed. This allows to integrate specialty materials and devices in a high-throughput fashion on a silicon photonics wafer. 

In this project we want to extend the toolkit by adding next-generation ultra-low-loss phase shifters on silicon photonics, both based on nano-electro-mechanical systems as using advanced electro-optic materials, on an advanced silicon photonics IC and co-integrate III-V semiconductor optical amplifiers. The power of this integration technology will be demonstrated through a LiDAR demonstrator.