/Interfacial characterization of Al-Ge eutectic bonded wafers

Interfacial characterization of Al-Ge eutectic bonded wafers

Master projects/internships - Leuven | More than two weeks ago

Explore MEMS integration using Al-Ge bonding technology  

AlGe bonding is a widely used process to manufacture hermetic sealing rings on MEMS devices. Al and Ge form a eutectic when contacted together at 423 degrees Celsius. To form the eutectic intimate metal to metal contact is essential. Both metals form a native oxide when exposed to atmosphere. Prior to bonding the metals have to be cleaned to remove the native oxides. 

In this internship we are looking for a master student that will collaborate with the WBA team in developing suitable cleaning methods for removing the native oxides , characterizing the kinetics of the native oxide formation and investigating the effect of the oxide layer on bonding defects and bond strength. 

The student will need to collaborate with engineers from the cleaning team, perform coupon annealing experiments, wafer bonding experiments and take the lead in characterizing the resulting samples using SEM, FIB, TEM and EDX with help from the materials characterization team at imec.

Type of Project: Combination of internship and thesis 

Master's degree: Master of Engineering Technology 

Mentor: Jakob Visker

For more information or application, please contact Lan Peng (lan.peng@imec.be)

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