Investigating the influence of oxide surface functionalization on etch selectivity

Continuous downscaling of microelectronic devices increases the complexity of their structure and fabrication. Surface and interface control is becoming increasingly important in semiconductor manufacturing processes as the device dimensions shrink. One promising approach involves using organic molecules, typically self-assembled monolayers, to enable precise control of material surface properties. These molecules have proven effective for preventing pattern collapse during the drying of high-aspect ratio structures and as protective layers for patterning by area-selective deposition. Moreover, they can facilitate selective etching by protecting materials from attack by etching chemistries. 

This research project focuses on understanding the mechanism of mitigating SiOx loss during semiconductor (e.g. SiGe) etch through oxide surface functionalization (OSF). The properties and performance of the protective layer are directly related to surface coverage by OSF molecules. The main goal of this work is to investigate how OSF surface coverage influences etch selectivity. The candidate will develop methodologies to analyze surface coverage and characterize the efficiency of selective coating as a protective layer. To provide a fundamental understanding of OSF molecule interactions with selected materials, the candidate will study how surface functionalization affects material properties such as wettability and electrostatic charge. The project involves the use of advanced characterization techniques, including SEM, TEM, AFM, solid-surface zeta-potential, ellipsometry, TOF-SIMS. 

Successful results are expected to lead to publication in a peer-reviewed journal.

Master's degree: Master of Engineering Science; Master of Science; Master of Engineering Technology

Required educational background: Chemistry/Chemical Engineering; Materials Engineering; Nanoscience & Nanotechnology

For more information or application, please contact the supervising scientist Alina Arslanova (Alina.Arslanova@imec.be).