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Investigation on the template effect of the seed layer for ferroelectric HZO layer
Leuven | More than two weeks ago
Study state-of-art interfacial layer engineering between thin film layers for next-generation FeRAM capacitor.
The template effect of the seed layer for the ferroelectric hafnium zirconate (HZO) layer will be studied. Trilayer structure of seed/doped HZO/capping layer will be fabricated by atomic layer deposition (ALD) process between top and bottom electrode as descripted in a supplement image. The nucleation and chemical reactions during the ALD process of the HZO layer will be investigated, varying the type of the seed layer and the thickness of each layer. For characterization of the device, the analysis tools which can obtain physico-chemical properties such as x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) will be used. Additionally, efforts will be made to correlate the ferroelectric response of the metal-insulator-metal (MIM) capacitor to achieve higher performance in Ferroelectric Random Access Memory (FeRAM).
Type of project: Internship, Combination of internship and thesis
Duration: 12 months
Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science
Required background: Materials Engineering, Chemistry/Chemical Engineering, Electrotechnics/Electrical Engineering, Nanoscience & Nanotechnology
Supervising scientist(s): For further information or for application, please contact: DaeSeon Kwon (DaeSeon.Kwon@imec.be) and Mihaela Ioana Popovici (Mihaela.Ioana.Popovici@imec.be)
Imec allowance will be provided for students studying at a non-Belgian university.