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Material and etch chemistry screening for selectivity improvement and profile control of HAR structure
Leuven | More than two weeks ago
Explore new etch process solution for future device
§Problem statement, challenge
§Mask selectivity on high aspect
ratio etch
§Conventional RIE chemistry (CxFy, CxHyFz, SFx, HBr, Cl...) shows limited margin
of mask selectivity
§Passivation depth control to
minimize bow growth
§Cycling (dep + etch) concept is
difficult to control
§Research objectives, goals
§Explore new chemistry to improve
mask selectivity/passivation location control
§Possible candidate: Metal + halogen
gas....
§Engineer stack and assess new
materials depending on targeted applications (MOL M0A or V0+: HM, spacer,
CESL), FEOL NSH or Gate ...)
§Understand passivation mechanism of
new chemistry in different stack configuration
§Consider environmental impact via
stack engineering and etch chemistry selection
§Methodology/workplan
§Material characterization: XRD,
SIMS,EDS/TEM, SEM... In
vacuo AR-XPS!
Required background: Engineering Technology, Engineering Science,
Type of work: 30% modeling, 60% experimental, 10% literature
Supervisor: Stefan De Gendt
Co-supervisor: Violeta Georgieva
Daily advisor: Violeta Georgieva
The reference code for this position is 2024-059. Mention this reference code on your application form.