PhD - Leuven | More than two weeks ago
Your chance to be part of the next generation of high quantum efficiency Ge photodiodes
Vertically illuminated Germanium based photodiodes can play a pivotal role in enabling next generation of sensor systems. Low leakage current and high quantum efficiency are essential towards achieving this objective. The leakage current in the current devices are a result of both bulk and surface recombination. Addressing the surface recombination would need the identification of the right surface passivation layer & integrating them in a device flow.
In this internship, you would be tasked with running TCAD simulations to identify the right device dimensions/parameters to minimize leakage current. You will also be required to do electrical characterization of devices (MIS CAP, Diodes) & share your findings with the project team. You may also be required to do optical characterization.
Type of Project: PhD Internship
Master's degree: Master of Engineering Technology
Duration: 6 months to 1 year
Master program: Electrotechnics/Electrical Engineering; Nanoscience & Nanotechnology
Supervisor: Pol Van Dorpe (Physics, Nano)
For more information or application, please contact Sandeep Seema Saseendran (firstname.lastname@example.org)