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Postdoctoral Researcher - Device Engineer
Research & development - USA | Just now
Device Engineer
imec USA Postdoctoral Fellowship
What You Will Do
2D materials like tungsten disulfide (WS2) are poised to have a significant impact on future high performance logic chips. Their exceptional properties hold the promise of enabling ultimate gate length scaling, potentially extending the logic transistor scaling roadmap. These materials have the potential to reshape how we perceive chip architecture by facilitating compact back-end-compatible transistors, blurring the distinction between front-end and back-end. Recent years have seen substantial maturity in lab-based 2D-transistor research, paving the way for potential industrial integration. To fortify exploratory logic research on ultra-scaled channel transistors, imec is seeking a highly skilled Nanoelectronic Device Engineer Postdoctoral Fellow to lead and advance its activities in the United States. This role involves a vibrant collaboration between imec and Purdue University, and will be stationed at our new imec USA site located on Purdue University’s campus in West Lafayette, Indiana.
As the Successful Candidate
You will offer experimental support to advance exploratory research on ultra-scaled channel transistor technology within a cross-Atlantic project. Your primary focus will involve developing 2D FET device prototypes, paying attention to critical areas such as i) 2D channel formation and encapsulation, ii) contact and doping strategies, and iii) gate stack development. Collaborating with local teams at Purdue University, you will lead research activities on measuring electrical performance and key reliability monitors that enable the progression of device engineering innovations into technologically viable paths. Your lab research activities will synchronize with Imec teams in the US, Belgium, and Purdue, with the outcomes of your research upscaled in imec's 300 mm clean-room facility in Belgium.
Coupon-level fabrication and basic device characterization will be a joint effort between Purdue’s and imec's semiconductor pilot lines and established device testing labs. You will closely engage with device physicists, designers, process integration engineers, as well as physicists and chemistry researchers for device development and integration enhancements. Your work will take place in Purdue University's facilities as well as in imec research labs, collaborating with an international, multidisciplinary team. Regular participation and contributions to project and team meetings is expected.
Who You Are
Recently completed (or soon to complete) a Ph.D. in Electrical Engineering, Materials Science, or Physics, with relevant experience.
Have hands-on experience in nanodevice fabrication and characterization.
Have a solid theoretical knowledge and very good understanding of the device/2D materials physics.
Are familiar with CMOS technology, device simulation, and data analysis tools.
Have published in top-level conferences and/or high-impact journals in the field.
Self-motivated, independent, innovative, results-driven, yet rigorous, and a team player with a clear focus on delivering outcomes.
Strong communication, interpersonal, and organizational skills to bridge research groups and project partners in an interdisciplinary team.
Excellent verbal and written communication skills, fostering seamless interaction with local and remote colleagues and partners.
Adaptable to an international collaboration and willingness for short and long stays at imec headquarters in Belgium.
This opportunity invites you to be part of pioneering research and innovation within an international, diverse and dynamic environment.
imec USA Postdoctoral Fellowship
What You Will Do
2D materials like tungsten disulfide (WS2) are poised to have a significant impact on future high performance logic chips. Their exceptional properties hold the promise of enabling ultimate gate length scaling, potentially extending the logic transistor scaling roadmap. These materials have the potential to reshape how we perceive chip architecture by facilitating compact back-end-compatible transistors, blurring the distinction between front-end and back-end. Recent years have seen substantial maturity in lab-based 2D-transistor research, paving the way for potential industrial integration. To fortify exploratory logic research on ultra-scaled channel transistors, imec is seeking a highly skilled Nanoelectronic Device Engineer Postdoctoral Fellow to lead and advance its activities in the United States. This role involves a vibrant collaboration between imec and Purdue University, and will be stationed at our new imec USA site located on Purdue University’s campus in West Lafayette, Indiana.
As the Successful Candidate
You will offer experimental support to advance exploratory research on ultra-scaled channel transistor technology within a cross-Atlantic project. Your primary focus will involve developing 2D FET device prototypes, paying attention to critical areas such as i) 2D channel formation and encapsulation, ii) contact and doping strategies, and iii) gate stack development. Collaborating with local teams at Purdue University, you will lead research activities on measuring electrical performance and key reliability monitors that enable the progression of device engineering innovations into technologically viable paths. Your lab research activities will synchronize with Imec teams in the US, Belgium, and Purdue, with the outcomes of your research upscaled in imec's 300 mm clean-room facility in Belgium.
Coupon-level fabrication and basic device characterization will be a joint effort between Purdue’s and imec's semiconductor pilot lines and established device testing labs. You will closely engage with device physicists, designers, process integration engineers, as well as physicists and chemistry researchers for device development and integration enhancements. Your work will take place in Purdue University's facilities as well as in imec research labs, collaborating with an international, multidisciplinary team. Regular participation and contributions to project and team meetings is expected.
Who You Are
Recently completed (or soon to complete) a Ph.D. in Electrical Engineering, Materials Science, or Physics, with relevant experience.
Have hands-on experience in nanodevice fabrication and characterization.
Have a solid theoretical knowledge and very good understanding of the device/2D materials physics.
Are familiar with CMOS technology, device simulation, and data analysis tools.
Have published in top-level conferences and/or high-impact journals in the field.
Self-motivated, independent, innovative, results-driven, yet rigorous, and a team player with a clear focus on delivering outcomes.
Strong communication, interpersonal, and organizational skills to bridge research groups and project partners in an interdisciplinary team.
Excellent verbal and written communication skills, fostering seamless interaction with local and remote colleagues and partners.
Adaptable to an international collaboration and willingness for short and long stays at imec headquarters in Belgium.
This opportunity invites you to be part of pioneering research and innovation within an international, diverse and dynamic environment.