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Research update

Monolithic integration of GaN components boosts power integrated circuits

The successful cointegration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a 200V GaN-in-SOI power IC


Most GaN power systems today are formed from multiple chips which affects the performance of GaN devices.

The best way to exploit the superior switching speed of GaN power ICs is to integrate all components on the same chip.

Imec has already made tremendous progress monolithically integrating building blocks on a silicon-on-insulator (SOI) substrate such as drivers, half bridges, and control/protection circuits.

Stefaan Decoutere talks about the latest additions to the portfolio: d-mode HEMTs and Schottky barrier diodes.