Automated model fitting for scalable characterization of spin qubit devices

Efficient characterization of quantum dot spin qubits is essential for advancing scalable silicon‑based quantum computing technologies. At imec, state‑of‑the‑art qubit devices are fabricated on 300 mm silicon wafers using EUV lithography, enabling unprecedented uniformity and industrial‑scale reproducibility. These devices are measured using advanced cryogenic and RF instrumentation, producing rich datasets that demand increasingly automated analysis workflows.

This internship focuses on developing and applying robust model‑fitting methodologies to extract key physical parameters from experimental characterization data, including charge stability diagrams and microwave spectroscopy measurements. By integrating automated fitting routines and optimization algorithms, the project aims to accelerate the interpretation of measurement results and the benchmarking of qubit performance such as single‑ and two‑qubit gate metrics. The resulting tools will enable rapid feedback to device design and fabrication, contributing to imec’s broader effort toward high‑fidelity, CMOS‑compatible quantum technologies.