PhD - Leuven | Just now
The shift to 6G demands the use and integration of advanced technology such as GaN as it stands out for its high efficiency, power density, and performance in high-frequency applications. This is true when designing high-frequency high-efficiency power amplifiers (PA).
State-of-the-art PAs often use load modulation techniques to increase the power efficiency of the amplifier. Combining the load modulation techniques - such as Load Modulated Balanced Amplifiers (LMBA), Outphasing PA (OPA), and Doherty PA (DPA) - with the black box models extracted using load-pull simulations/measurements is a general and effective strategy to design the PA at hand. However, the synthesis of the passive distribution and combining networks obtained from this black-box approach is currently still a manual engineering step.
The aim of this PhD is to
Hence, this PhD must result in a general black-box design methodology that is demonstrated on simulated and measured GaN PA designs (LMBA, OPA, DPA).
Required background: Nano and microelectronic, RF, electronic engineer or equivalent
Type of work: 30% circuit-level simulation, 40% developing the methods/algorithms, 30% GaN power amplifier design
Supervisor: Gerd Vandersteen
Co-supervisor: Piet Wambacq
Daily advisor: Gerd Vandersteen, Adam Cooman
The reference code for this position is 2026-088. Mention this reference code on your application form.