/Direct and converse magnetoelectric effect for advanced CMOS applications

Direct and converse magnetoelectric effect for advanced CMOS applications

Master internship - Leuven | Just now

Harnessing electric fields to write and read magnetism for ultra‑low‑power, CMOS‑compatible spintronic technologies.

Spintronic computing is a promising beyond-CMOS paradigm offering significant area and power reduction, multi-frequency operation, and inherent non-volatility of magnetic states. However, a key bottleneck for practical spintronic logic and memory devices is the lack of a scalable, energy-efficient transducer to electrically control (“write”) and detect (“read”) magnetic states. This project addresses that challenge by exploiting the magnetoelectric effect, which directly couples electric fields to magnetization via mechanical strain in piezoelectric–magnetostrictive heterostructures. An applied voltage induces strain in a piezoelectric layer, which is transferred to a magnetostrictive film to modulate its magnetization orientation (direct magnetoelectric effect). Conversely, changes in the magnet’s orientation produce a measurable voltage signal (inverse, or converse, magnetoelectric effect).

The internship will investigate both the direct and converse magnetoelectric effects in nanoscale piezoelectric–magnetic devices as a route to ultra-low-power magnetization control and readout. The student will fabricate and electrically characterize test structures using different piezoelectric and magnetostrictive material systems, quantifying magnetoelectric coupling and magnetization under both static (DC) operation. Emphasis will be placed on understanding the strain-mediated coupling mechanism at the nanoscale and optimizing material properties and device geometry to maximize transduction efficiency. These experimental efforts will be supported by multi-level modeling (materials, device, and circuit) within imec’s spintronics research group, guiding design and data interpretation. By addressing both the actuation and sensing aspects of magnetization, this interdisciplinary project aims to demonstrate the viability of magnetoelectric transducers for low-power, CMOS-compatible spintronic logic and memory applications, paving the way toward new energy-efficient computing and storage paradigms. This challenging research will provide a unique opportunity for a student with a strong interest in nanofabrication, magnetism, and advanced materials to contribute to cutting-edge spintronics device innovation.



Type of internship: Master internship

Duration: >5 Months

Required educational background: Physics, Electrotechnics/Electrical Engineering, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact Florin Ciubotaru (Florin.Ciubotaru@imec.be)

The reference code for this position is 2026-INT-177. Mention this reference code in your application.

Imec allowance will be provided.


Applications should include the following information:

  • resume
  • motivation
  • current study

Incomplete applications will not be considered.
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