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High aspect ratio Si etch in Angstrom node patterning era
PhD - Leuven | Just now
Assess fundamental limits to prepare the switch to new etch approaches for higher aspect ratio
Problem Statement / Challenge
3DDRAM and CFET are pushing towards higher AR in Si and SiGe/Si . We are at the limit of what current etch process designs can do. We need to assess where the fundamental limits are to prepare the switch to new etch approaches for higher aspect ratio.
Research Objectives
- Impact study and mechanisms behind advanced features such as RF pulsing, RF frequency and tailored waveform.
- Characterization of plasma/surface interactions as a function of AR and material composition (Si, SiGe, etc..)
- Setup of an approach for the study of etch fundamentals
Work Plan
- Influence of ions (IAD, IEDF, ion flux)
- Plasma composition dependent etch yield
- Evolution of composition as function of AR
- Design and conception of experiments and devices for plasma/surface interaction study
- External collaboration for advanced plasma diagnostics/simulation
Required background: Material Science
Type of work: 80% experimental, 20% literature
Supervisor: Stefan De Gendt
Co-supervisor: Claudia Fleischmann
Daily advisor: Emmanuel Dupuy
The reference code for this position is 2026-079. Mention this reference code on your application form.