Master internship - Leuven | Just now
Background and Motivation:
The rapid growth of artificial intelligence (AI), edge computing, and
data-intensive applications has created a strong demand for fast,
energy-efficient, and scalable memory technologies. Conventional memory
solutions such as SRAM, DRAM, and Flash increasingly face limitations related
to power consumption, scalability, and performance. Magnetic Random Access
Memory (MRAM) has emerged as a promising next-generation non-volatile memory
technology due to its low latency, high endurance, non-volatility, and compatibility
with CMOS processes. Despite these advantages, MRAM technologies, regardless of
the employed switching mechanisms such as spin-transfer torque (STT),
spin-orbit torque (SOT), or voltage-control of magnetic anisotropy (VCMA), continue
to face challenges including high switching energy and reliability issues.
These limitations are strongly linked to material quality, interface
properties, and scattering mechanisms within Magnetic Tunnelling Junctions
(MTJs), which form the fundamental building blocks of MRAM devices. This
master’s thesis proposes a materials-driven approach to address these
challenges by focusing on the development of novel materials for MTJs, such as
FePd, FePt, RuAl. By exploring new material systems and improving crystalline
quality, highly crystalline MTJs can reduce scattering during read and write
operations and enhance the tunnelling magnetoresistance (TMR) ratio. Developing
high-performance MTJs that are compatible with standard MRAM fabrication
processes is expected to accelerate MRAM commercialization and support the
evolving needs of the semiconductor industry.
Objectives of the Thesis:
The main objective of this thesis is to investigate and optimize MTJ thin films
for MRAM applications through an in-depth materials and process study. The
specific objectives are:
Experimental Methodology:
The experimental work will be carried out in imec, providing access to
state-of-the-art industrial research facilities. Exploratory thin film for MTJ
stacks will be deposited using advanced magnetron sputtering systems dedicated
to materials research. Emphasis will be placed on controlling deposition
parameters and understanding their influence on growth and interface formation.
Structural and compositional characterization of the deposited thin films will be performed using imec’s extensive suite of analytical techniques such as XRD, AFM, enabling detailed analysis of crystallography, composition, and interfaces. Magnetic characterization will be conducted using advanced measurement techniques like VSM, FMR and CIPT to evaluate key magnetic properties. The magnetic results will be systematically correlated with the structural and interfacial characteristics of the exploratory MTJs.
Expected Outcomes and Impact:
This thesis is expected to provide a deeper understanding of the relationship
between sputtering conditions, crystalline quality, and magnetic performance in
magnetic thin film in MTJs. The results will help identify material and
interface engineering strategies to enhance TMR and reduce switching energy.
The findings will support imec’s ongoing MRAM research efforts and contribute
to the development of scalable, reliable, and high-performance MRAM
technologies compatible with industrial manufacturing.
Skills and Knowledge Development:
During this master’s thesis, the student will develop:
Type of internship: Master internship
Duration: 6 - 9 months
Required educational background: Nanoscience & Nanotechnology
University promotor: Clement Merckling (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Hannah Tran (Hannah.Tran@imec.be) and Giacomo Talmelli (Giacomo.Talmelli@imec.be)
The reference code for this position is 2026-INT-083. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information: