/Researcher GaN Epitaxy by MOCVD

Researcher GaN Epitaxy by MOCVD

Research & development - Leuven | Just now

To reinforce imec’s R&D in this field we are looking for a hands-on Researcher in GaN epitaxy by MOCVD, which is eager to contribute to this technological challenge.

Researcher GaN Epitaxy by MOCVD

What you will do

You will be a member of the epitaxy research group, which is responsible for developing growth processes in close collaboration with imec’s device integration departments. You will work in a cross-functional team with whom you interact frequently. You will be part of a dynamic multidisciplinary and multicultural environment in close cooperation with researchers, process and hardware engineers, industrial assignees, and device experts. 

As a researcher in epitaxial growth, you will be responsible for the development of new MOCVD processes of GaN based materials which will be required in the future by imec’s research programs or customers. With your deep experience in III-N deposition, device physics, material characterisation and MOCVD hardware, you will also have an advisory and support role for students, engineering, and hardware colleagues. 

More specifically, you will: 

  • Define, develop and optimize III-N epitaxial growth processes on 200/ 300 mm Si and engineered substrates using MOCVD. 
  • Own the process development roadmap, including process specifications, development plans, DOE definition, risk assessment, resource planning and execution. 
  • Understand the device and module context of the developed epitaxial processes, translating power and RF device requirements into epitaxial layer specifications and process targets. 
  • Develop fundamental understanding of the physical and chemical mechanisms governing III-N growth, defect formation, strain management, dopant incorporation and interface engineering. 
  • Drive metrology strategy for epitaxial process development, including structural, optical, electrical and materials characterization, and ensure data-driven process optimization. 
  • Develop deep understanding of MOCVD reactor hardware, process parameters, maintenance limitations and tool performance; collaborate closely with hardware and equipment suppliers to continuously improve process capability. 
  • Collaborate closely with device integration, characterization, reliability, process engineering and manufacturing teams to ensure successful process integration. 
  • Monitor industry roadmaps, benchmark state-of-the-art III-N technologies, and actively engage with equipment suppliers, material vendors, industrial partners and academic collaborators. 
  • Contribute to research programs, joint development projects, EU-funded projects and industrial collaborations. 
  • Publish scientific results, generate intellectual property, present at international conferences and contribute to imec's long-term technology roadmap. 
  • Define and supervise PhD and Postdoctoral research topics and actively share knowledge through mentoring, reporting and technical reviews. 
  • Own the complete lifecycle of epitaxial process development from concept generation and process development through qualification, documentation, line release and technology transfer to internal and external stakeholders. 

For your integration in imec’s fab environment and on imec’s MOCVD tool, you will be coached on-the-job by a peer GaN MOCVD scientist.

Context 

The MOCVD technology is used at imec to epitaxially grow AlGaN/GaN based materials for power and RF transistors because of their higher critical electric field for breakdown and faster switching speed. It is expected that a significant power saving will be realized over the conventional Si power devices, thus contributing to the overall energy efficiency of power supplies, photovoltaic inverters, and many other power systems. 

Key to all these applications is the growth of the GaN hetero structures on 200/ 300 mm Si (or engineered substrates like SOI), using metalorganic vapour phase epitaxy (MOVPE, also known as MOCVD). 

To reinforce imec’s R&D in this field we are looking for a hands-on (m/f) Researcher in GaN epitaxy by MOCVD, which is eager to contribute to this technological challenge.

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

  • You have a PhD in Physics, Material Science or similar.  
  • Hands-on experience in epitaxial growth of III-V materials by MOCVD is a must, preferably of GaN based materials 
  • You have a deep knowledge of III-V based devices, ideally of AlGaN/GaN based HEMTs 
  • Strong understanding of semiconductor process development methodologies, including statistical data analysis and process qualification. 
  • Experience with advanced epitaxial characterization techniques (HRXRD, AFM, TEM, SIMS, Hall, optical and electrical characterization). 
  • Ability to connect device requirements with epitaxial process specifications and integration needs. 
  • Demonstrated capability to work across disciplines including materials science, device physics, process integration, metrology and equipment engineering. 
  • Knowledge of industrial epitaxy platforms and technology transfer practices is considered a strong advantage. 
  • Given the international character of imec, good knowledge of (spoken and written) English is a must.  

 

IMEC and its affiliates will not accept unsolicited resumes from any source other than directly from a candidate. IMEC will consider unsolicited referrals and/or resumes submitted by vendors such as search firms, staffing agencies, professional recruiters, fee-based referral services and recruiting agencies (hereafter “Agency”) to have been referred by the Agency free of charge. IMEC will not pay a fee to any Agency that does not have a prior written agreement with IMEC, validated by its HR department, in place regarding a specific job opening and allowing to submit resumes.

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