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/Revealing In-operando band structure dynamics in next generation 2D TMD semiconductor devices: Correlating gate-induced band structure changes with device performance.

Revealing In-operando band structure dynamics in next generation 2D TMD semiconductor devices: Correlating gate-induced band structure changes with device performance.

PhD - Leuven | Just now

From gate-tuned band structure to device-level performance in advanced 2D TMD transistors
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2D In-op characterization PhD topic 2026_Final.docx
 


 

Required background: Physics, Semiconductor Physics, Engineering Technology

Type of work: 80% experimental, 10% literature, 10% modeling

Supervisor: Claudia Fleischmann (KU Leuven)

Co-supervisor: Claudia Fleischmann (KU Leuven)

Daily advisor: Dhirendra Singh

The reference code for this position is 2027-103. Mention this reference code in your application.

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