/Study of Dep/Etch Cycling Process for High Aspect Ratio Etch

Study of Dep/Etch Cycling Process for High Aspect Ratio Etch

Master projects/internships - Leuven | Just now

HAR etch for CFET applications

Idea is to etch HAR structures (~1:20) (very rough overview) meeting criteria as below

Vertical Profile
Selectivity to Gate Protective layer(s)
Critical Dimension (CD) requirement
Uniformity within Wafer and Pitch

Type of project: Internship

Required degree: Master of Science, Master of Engineering Technology

Required background: Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering, Physics

Supervising scientist(s): For further information or for application, please contact: Subhobroto Choudhury (Subhobroto.Choudhury@imec.be)

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