Study of the impact of different chemistries on the growth of MX2

Novel two-dimensional materials, especially semiconducting transition metal dichalcogenides (MX2, with M a transition metal and X a chalcogen) offer advanced functionality in complex and ultra-scaled integrated systems. In view of their compelling electronic, magnetic, and optical properties for a monolayer form, IMEC explores their integration for various applications and systems for advanced CMOS technologies in a beyond-silicon roadmap [1].

The application of 2D materials in nano-electronic devices requires the availability of deposition techniques that provide monolayer growth control and high crystallinity. Chemical Vapor Deposition (CVD) is widely accepted as the most promising deposition technique for MX2 layer manufacturing [2]. However, there are several challenges in integrating MX2 into a Fab-compatible CMOS flow. The selection of compatible chemistries within the thermal budget. In this project, the candidate will explore the impact of different chemistries on the process conditions.

The student will investigate the MX2 growth by CVD using state-of-the-art 300 mm clean room facilities and research infrastructure. The candidate will study the impact of the different chemistries and growth conditions on the kinetics of the CVD process, i.e., understanding the adsorption/diffusion mechanisms based on different chemistries. The candidate will form this understanding through a suite of advanced and complementary characterization techniques (such as Rutherford Backscattering Spectroscopy, (Conductive) Atomic Force Microscopy, Scanning Electron Microscopy, Water contact angle, Photoluminescence and Raman spectroscopy).

[1] D. Akinwande, et al., Nature 2019, 573, 507

[2] J. Jiang, et al., Chem. Soc. Rev., 2019, 48, 4639