/Cell-Aware vs. Small Cells

Cell-Aware vs. Small Cells

Master projects/internships - Leuven | More than two weeks ago

High quality and small area: can you have both at the same time?

No integrated circuit (IC) manufacturing process is flawless, so all ICs must be tested for manufacturing defects to ensure adequate product quality for customers. Advances in semiconductor technologies have enabled the integration of more gates with smaller feature sizes into a single IC, making ICs increasingly prone to numerous, subtle defects. Furthermore, ICs are now widely used in safety-critical applications like automotive, avionics, and medical domains, where undetected faults ("test escapes") are unacceptable. Consequently, the semiconductor industry seeks to enhance IC manufacturing test quality while retaining benefits like high fault coverage and automated diagnosis through automatic test pattern generation (ATPG).

 

Eichenberger et al. [1] identified that many test escapes result from undetected cell-internal defects, as traditional stuck-at ATPG only targets faults in between cells. Cell-aware testing (CAT) is a two-step test generation approach that also targets these cell-internal faults. In Step 1, potential defect locations are identified for each cell based on its layout, followed by detailed analog simulations to determine which cell-level test patterns detect which defects. The results are stored in a binary defect detection matrix (DDM) for each library cell, with columns for defects and rows for patterns. An entry (d,p) is marked as ‘1’ if and only if pattern p detects defect d. Step 2, cell-aware ATPG, is performed per chip design and involves expanding cell-level test patterns into core- or chip-level patterns through ATPG propagation and justification. The expansion's success is guaranteed, as it depends on the circuit environment of the cell-under-test [Zhao et al., ITC’19].

 

CAT is particularly effective for circuits containing large and complex standard cells with many inputs. These cells have a greater number of cell-internal potential defect locations and more cell-level test patterns to choose from. CAT specifically addresses these additional faults by embedding cell-level test patterns that detect them into the chip-level test pattern set. In contrast, CAT has minimal impact on small one- or two-input library cells, as they have few cell-internal defect locations, and the corresponding faults are usually covered already by one of their few cell-level test patterns necessary for external faults.

 

Large and complex standard cells can be constructed from small one- or two-input library cells. However, large complex cells are designed to be more area-efficient than implementing the same function using smaller cells with fewer inputs. Can we quantify this area advantage? If large, complex standard cells are broken down, their cell-internal defects become cell-external and thus detectable by regular stuck-at ATPG. Are the fault coverages from these two approaches identical? Can they be addressed with the same test patterns? Are these two methods of test pattern generation fully equivalent—CAT with large and complex cells in the netlist versus regular stuck-at ATPG applied to a netlist where large cells are decomposed into small, simple ones?

 

We are seeking a student in Computer Science, Informatics, or Electrical Engineering with excellent or high academic performance and a keen interest in learning about design-for-test (DfT) for digital integrated circuits (ICs). While deep knowledge of semiconductors is not a prerequisite, proficiency in at least one programming language (C++, Python) and English is essential, as imec is an international organization where English is the primary working language.



Type of project: Internship

Duration: 6 months

Required degree: Master of Engineering Technology, Master of Engineering Science, Master of Science

Required background: Computer Science, Electrotechnics/Electrical Engineering

Supervising scientist(s): For further information or for application, please contact: Po-Yao Chuang (Po-Yao.Chuang@imec.be) and Erik Jan Marinissen (Erik.Jan.Marinissen@imec.be)

Imec allowance will be provided.

Who we are
Accept marketing-cookies to view this content.
imec's cleanroom
Accept marketing-cookies to view this content.

Related jobs

Metrology-informed TCAD simulation of process variability in NanoSheet-based transistors

Combining metrology and simulation to assess how process variability shapes the performance of nanosheet transistors in next-generation semiconductor nodes.

Analytical understanding of MOCVD growth and defectivity in 2D materials by Image processing

Morphological assessment of transition metal dichalcogenide (TMDs) layers to correlate the MOCVD growth behaviour and introduced defectivity. 

Fabrication and Characterization of 2D Material-Based Ferroelectric Devices

Make the smallest, thinnest, fastest intelligent transistor in the world and challenge von Neumann on the way 

Design of magnetoelectric devices for advanced spintronic applications

Modeling and quantification of magnetoelectric effect 

Extreme Ultraviolet Light Coherent Diffractive Imaging and Scatterometry for Characterization of Nanoscale Semiconductor Structures and Devices

Enhance the capabilities of extreme ultraviolet nanoscale coherent diffractive imaging and scatterometry with machine learning, advanced reconstruction and data processing algorithms to enable non-destructive imaging and characterization of complex buried semiconductor nanostruct

Alleviating Thermal Challenges In Angstrom Nodes: Paving The Way For 3D Integrated Circuits (3D-ICs) of The Future

Ready to embark on a journey towards keeping electronics “cool”? Join us for this exciting opportunity to remove thermal bottlenecks in 3DICs to enable future technologies that have superior performance, are reliable and energy-efficient!!
Job opportunities

Send this job to your email