Effective modeling of spin qubit devices with imperfections

Accurate modeling of quantum dot spin qubits and their imperfections is essential for advancing scalable silicon‑based quantum computing technologies. At imec, state‑of‑the‑art qubit devices are fabricated on 300 mm silicon wafers using EUV lithography, enabling unprecedented uniformity and industrial‑scale reproducibility. Despite these advances, residual imperfections such as charge noise, variability in valley splitting and nuclear spin interactions remain key factors limiting qubit coherence and control fidelity.

This internship focuses on developing and applying physics‑informed effective models that explicitly capture these non‑idealities. By incorporating effects such as charge fluctuations and valley state mixing, the project aims to investigate the behavior of pulse sequences applied to non‑ideal silicon‑based quantum dot spin qubits. Advanced simulation techniques and optimization algorithms will be employed to analyze deviations from ideal two‑level dynamics and to extract quantitative performance metrics.

The resulting framework will provide deeper insight into the relationship between fabrication variability and qubit performance, enabling rapid diagnosis of failure modes and more accurate benchmarking of single‑ and two‑qubit operations. Ultimately, this work will support the development of more robust qubit designs and control strategies, contributing to imec’s broader effort toward high‑fidelity, CMOS‑compatible quantum technologies.