Electrical Characterization of Hafnium-Based Ferroelectric Memories

Ferroelectric materials exhibit a spontaneous polarization that can be reversed by an external electric field, a property that makes them highly attractive for non-volatile memory applications. Among them, hafnium-based ferroelectric materials have emerged as particularly promising due to their compatibility with standard CMOS processes and scalability to sub-10 nm nodes. Ferroelectric Random Access Memory (FeRAM) devices leverage this polarization switching to store data, offering several advantages over traditional memory technologies, including low power consumption, fast write speeds, and excellent endurance. These features make FeRAM a key contender in the next generation of embedded and stand-alone memory solutions.

One of the most compelling attributes of FeRAM devices is their fast switching speed, which can surpass that of conventional DRAM thanks to the intrinsic ferroelectric switching mechanism. However, this switching behavior is sensitive to various factors, including fabrication process conditions and long-term device usage. Device aging and fatigue can degrade performance over time, potentially impacting the switching speed and overall reliability. Therefore, a detailed understanding of how switching dynamics evolve with processing parameters and throughout the device lifetime is essential for optimizing device design and ensuring consistent performance.

This master thesis project will focus on investigating the switching speed of state-of-the-art hafnium-based FeRAM devices through Non-Linear Switching (NLS) measurements. The work will involve the electrical characterization of a range of devices fabricated at imec, with the goal of collecting comprehensive datasets and analysing the relationships between processing conditions and switching behavior. The candidate will gain hands-on experience with advanced measurement techniques and data analysis methods, contributing to the development of next-generation memory technologies.