/Temperature dependent performance characterization of IGZO devices

Temperature dependent performance characterization of IGZO devices

Master projects/internships - Leuven | Just now

Assessing IGZO for novel applications

Indium Gallium Zinc Oxide (IGZO) Thin-Film Transistors (TFTs) have emerged as a leading technology for wide range of applications. Their device performance is affected by the operating temperature. Detailed investigation of their temperature dependence in terms of the performance as well as the underlying physical mechanisms responsible driving this dependence is crucial. This internship focuses on systematic characterization of IGZO-TFTs across wide range of temperature to assess these and explore novel applications.



Type of project: Internship

Duration: 1 year

Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science

Supervising scientist(s): For further information or for application, please contact: Subhali Subhechha (Subhali.Subhechha@imec.be)

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