Epsilon Near Zero (ENZ) materials for enhancing the emission response of Perovskite/QD thin films

Epsilon-Near-Zero (ENZ) materials are a class of metamaterials characterized by their dielectric permittivity approaching zero within a specific frequency range. This unique property results in several exciting phenomena, including wavelength stretching, phase consistency, electric-field enhancement, and the ability to trap and guide light. These characteristics make ENZ materials highly suitable for applications in advanced optical devices, nanocircuitry, and communication technologies. Conductive oxides such as ITO and AZO have ENZ characteristics that can be tuned by tuning carrier concentration. This tunability allows spectral alignment with emission or absorption peaks of materials such as Perovskites or QDs which provides active electrical control for improving light extraction, beam shaping, color tuning, and dynamic modulation in thin photodetectors, LEDs or lasers, as well as enhancing responsivity and speed in photodetectors through cavity integration and field-confinement strategies.
This project is a combination of optical simulation and hands-on experimental works in the lab.

Type of project: Combination of internship and thesis 

Master's degree: Master of Engineering Technology; Master of Science; Master of Engineering Science 

Master program: Materials Engineering; Nanoscience & Nanotechnology; Physics; Chemistry/Chemical Engineering 

Duration: 4-6 months

Supervisor: Jan Genoe 

For more information or application, please contact the supervising scientist Mahyar Mazloumi (Mahyar.Mazloumi@imec.be) and Isabel Pintor Monroy (Isabel.PintorMonroy@imec.be) 

Imec allowance will be provided.