/Integrated laser systems for neutral atom and ion quantum computing

Integrated laser systems for neutral atom and ion quantum computing

PhD - Gent | Just now

The goal of this PhD is to develop an integrated tunable laser source in an Aluminum Nitride photonic integrated circuit, that will be tailored to driving qubit gates in neutral atom and ion quantum computing.

Over the past years, a second quantum revolution has emerged because researchers gained unprecedented control over nature’s best qubit, the atom. In atomic and ionic quantum computing, qubit gates are implemented with a set of laser beams that span from the UV to near-IR. These laser beams have to meet the most stringent requirements in linewidth and stability and must be modulated with speeds above 1 MHz (up to 100s of MHz to implement optimal qubit control pulses), with extreme light extinction ratios (above 50 dB to minimize gate errors), and without interfering background light. In such systems, the problem is therefore not so much the qubit scaling, but the scaling of the photonic control system.

 

Photonic integrated circuits (PICs) are a promising route to integrate many optical functionalities with performance specs that surpass their bulk counterparts on a single chip, thereby providing scalability and cost reduction as additional advantages. Traditionally, most PICs were developed in silicon due to the dense integration possibilities and the fact that devices could be fabricated using technologies from the CMOS electronics world, allowing high-quality, and repeatable fabrication processes. Silicon is however not transparent for visible wavelengths and hence cannot be use for atomic and ionic control.

Aluminum Nitride (AlN) on the other hand is transparent down to the UV and is both an electro-optic and piezoelectric material. Hence, by applying an electric field it is possible to change the AlN refractive index, allowing the implementation of active photonic devices. Additionally, AlN can serve as a host material for several defects allowing the implementation of integrated UV and visible laser sources. Moreover, one can consider transfer printing of an active laser medium on top of the AlN PIC. The goal of this PhD is to develop an integrated tunable laser source in an AlN PIC that will be tailored to driving qubit gates in neutral atom and ion quantum computing.

 

You will be conducting a theoretical and numerical analysis of new device stacks, fabricate those devices in the UGent and imec cleanrooms, and characterize the fabricated devices. While design and numerical analysis is part of the PhD, it should be stressed that the fabrication and experimental part will form the main focus of the work.

 

 

For more information, please contact

 

Kasper.VanGasse@UGent.be

frederic.peyskens@imec.be



As an ideal candidate you:

  • Have a Master in Photonics Engineering, Engineering Physics, Electronics, or Physics (or equivalent)
  • Have a strong interest in experiment and fabrication
  • Have strong English communication skills

 

Basic knowledge of the following is a plus but not a requirement:

  • Python programming
  • Device simulators for photonics (Lumerical FDTD/MODE, COMSOL)
  • Semiconductor manufacturing processes for photonics
  • Basic quantum mechanics


Required background: Photonics Engineering, Engineering Physics, Electronics, Physics, or equivalent

Type of work: 80% experimental (fabrication + characterization), 20% design

Supervisor: Kasper Van Gasse

Co-supervisor: Frederic Peyskens

Daily advisor: Kasper Van Gasse, Frederic Peyskens

The reference code for this position is 2026-007. Mention this reference code on your application form.

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