PhD - Leuven | Just now
The microelectronics that power the electronic devices in our daily lives are enabled by billions of complex, nanostructured arrays of transistors that perform memory and logic operations. In order to enable smaller, faster, more powerful and more efficient devices, the global semiconductor industry is introducing complex, heterogeneous nanosheet (NS)-based transistors such as gate-all-around (GAA) and complementary field effect transistors (CFET). These NS structures and devices have uniquely complex structure (size, shape, layout, etc.) and composition (material heterogeneity, doping, strain etc.), and the structure-composition relationships present new challenges in understanding how these parameters relate to and determine electrical performance. Fundamentally, electrical performance of NS-devices is governed by the excitation and transport of charge carriers, which occur on ultrafast time scales (femto-to-pico-to nanosecond). Observing the real-time dynamics of charge carriers in NS-based devices, and relating the dynamical phenomenon to composition-structure relationships, remains a grand scientific challenge that if solved would improve our understanding of NS-device physics and pave the way for advanced characterization of the next generation of compute and store nanoelectronics.
The objective of this PhD project is to develop and deploy time-resolved reflectance spectroscopy in the near-to-mid infrared (IR) to characterize the ultrafast (femto-pico-nano second) dynamics of electrical carriers in advanced NS-devices, with the goal of linking the scattering and energy transfer mechanisms to their emergent electrical properties. The measured dynamical properties will be related to the electrical properties via electrical tests on the same NS devices, supported by advanced structural and material characterization. This ambitious project will be supported by imec’s advanced LAB and FAB infrastructure, which is composed of advanced production, metrology, and material characterization of advanced semiconductor devices. In particular, unique toolsets such as imec’s AttoLab, an ultrafast spectroscopic and materials characterization lab, will be central to measuring the ultrafast dynamics in NS devices. The breakthrough spectroscopic methods developed in this project will be supported by simulations of the dynamic optical response, as well as 2D/3D models of charge carrier migration to interpret the experimental data. You will work closely with experts in materials characterization, metrology, device fabrication and characterization, and modelling to provide a wholistic understanding of ultrafast carrier dynamics on NS device performance.
As a PhD candidate within imec's Ångström Patterning Department, you will,
What We Offer
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by facilitating your further career development:
Who You Are
Required background: chemistry, physics, material science, nanoscience, or related
Type of work: 10% literature study, 10% computation/modelling, 80% experimental
Supervisor: Pol Van Dorpe (KU Leuven)
Co-supervisor: Pol Van Dorpe (KU Leuven)
Daily advisor: Kevin Dorney
The reference code for this position is 2027-087. Mention this reference code in your application.