SEM based analysis for on-device overlay in sub-nm technology nodes

As the semiconductor technology moves towards sub-nm nodes through the enablement of high-NA (Numerical Aperture) Extreme Ultraviolet (EUV) lithography, layer-to-layer overlay control become critical along with pattern pitch-scaling. The existing methods for overlay estimation rely on dedicated optical features. There is a need of an alternative approach to develop more accurate overlay inspection using high-resolution metrology and algorithms. With this Master’s internship project, we aim to develop SEM image-based overlay analysis technique for on-device structures.

The key objective of the project:

• Image Processing: Develop image analysis techniques to extract accurate overlay using SEM/EDR data.
• Process compatibility: Reliability studies under different DOEs (Design of experiments) and potential improvement
• Publication: Aim for patent/publications and presentations at international conferences.
   

Master's degree: Master of Engineering Technology, Master of Engineering Science, Master of Science

Required educational background: Computer Science, Electrotechnics/Electrical Engineering, Physics, Nanoscience & Nanotechnology

Duration: 12 months

University promotor: Stefan De Gendt (Chemistry, Nano)

For more information or application, please contact the supervising scientist Rajendra Kumar Saroj (rajendra.kumar.saroj@imec.be).