PhD - Leuven | More than two weeks ago
Ushering in the era of advanced communication systems (5G, 6G) requires enabling increasingly complex circuits which are composed of several chips, each implemented in different technologies tailored for a specific function. Downscaling of CMOS technology has allowed the integration of radio-frequency (RF) transceivers on Silicon chips, but power amplifiers using III-V (InP, GaAs) and III-N (GaN) technologies, and high-performance switches fabricated on SOI substrates remain the preferred choice for RF Front-End circuits.
In order to develop sustainable, cost and power efficient RF systems, the current research at imec for RF front-end module technologies addresses: (i) the integration of high-speed GaN and III-V devices on a Si platform; and (ii) the co-integration of these device architectures with standard Si CMOS.
The integration of devices such as GaN HEMTs on Si substrates can degrade HEMT performance from both electrical (e.g. RF losses and distortion) and thermal perspectives, necessitating continued research on enhanced device and system performance solutions.
In this PhD, you will contribute to solve these challenges of GaN on Si technology by:
Required background: Candidates are expected to have a Master’s degree in Electrical Engineering, Material science, Nanoscience and Nanotechnology or equivalent, with a solid background in semiconductor physics and excellent quantitative/analytical skills.
Type of work: Characterization: 50%, Modelling: 50%
Supervisor: Jean-Pierre Raskin
Co-supervisor: Bertrand Parvais
Daily advisor: Sachin Yadav
The reference code for this position is 2024-007. Mention this reference code on your application form.