Article 3D NAND Flash
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Research update

Imec improves memory window of a 3D trench cell for next-gen NAND Flash

The results mark a milestone in enabling ultrahigh-density trench-based 3D NAND Flash memories


3D NAND Flash, with memory cells in a gate-all-around (GAA) vertical architecture, is the industry’s workhorse for high-density data storage applications.

To further boost bit storage density and control processing costs, a trench cell architecture has been proposed as an alternative to GAA.

In this article, imec presents an improved memory window of the 3D trench unit cell, a prerequisite to realizing next-gen trench-based 3D NAND Flash.