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MRAM technologies: from space applications to unified cache memory?

Towards CMOS-compatible fabrication of STT-, SOT-, VCMA-, VG-SOT- and domain-wall flavors of MRAM

Summary

Magneto-resistive random access memory (MRAM) is a non-volatile memory technology that relies on the (relative) magnetization state of two ferromagnetic layers to store binary information.

Throughout the years, different flavors of MRAM memories have emerged, making MRAM increasingly interesting for cache applications and in-memory computing.

In this article, Sebastien Couet, MRAM program manager and Gouri Sankar Kar, memory program director at imec discuss challenges and promises of the various MRAM family members (including spin-transfer torque (STT), spin-orbit torque (SOT), voltage-controlled (VCMA- and VG-SOT) and domain-wall MRAM). They highlight imec’s major role, i.e., developing a CMOS-compatible 300mm platform for bringing these MRAM technologies to the next level.