Zsolt Tőkei, fellow and program director of nano-interconnects at imec, explains the work behind the first experimental evidence that the resistivity of a thin conductor film on a 300mm silicon wafer can be lower than that of copper or ruthenium. Zsolt explains the research methodology of the project, commenced in 2016, and shares his excitement as to how the research will identify and categorize various binary and ternary alloys that can outperform copper and ruthenium when it comes to interconnect lines.
This video was originally published in Silicon Semiconductor.
Zsolt Tokei is imec fellow, and incoming program director of 3D system integration at imec. He joined imec in 1999 and, since then, has held various technical positions in the organization. First, as a process engineer and researcher in the field of copper low-k interconnects, then headed the metal section. Later he became principal scientist, program director of nano-interconnects and more recently transitioned to 3D interconnects. He earned a M.S. (1994) in physics from the University Kossuth in Debrecen, Hungary. In the framework of a co-directed thesis between the Hungarian University Kossuth and the French University Aix Marseille-III, he obtained his PhD (1997) in physics and materials science. In 1998, he started working at the Max-Planck Institute of Düsseldorf, Germany, as a post-doctorate researcher. Joining imec, he continued working on a range of interconnect issues, including scaling, metallization, electrical characterization, module integration, reliability, and system aspects.
Published on:
26 September 2023
